Inside the package, pin 1 connects to the LED’s anode, pin 2 to its cathode. The phototransistor sits with its collector on pin 4 and emitter on pin 3. There is no base pin exposed; base current is generated solely by illumination.
Switching speed is heavily dependent on the load resistor (R_L). A smaller R_L reduces the time constant (R_L * C_CE) but also reduces output voltage swing. For higher speeds (>100 kHz), consider a phototransistor optocoupler with a base access pin or a digital optocoupler. Part 6: Isolation Characteristics The isolation barrier is the primary reason to use the A1458. The datasheet provides the following isolation parameters:
| Model | CTR (%) | V_CEO (V) | t_on/t_off (μs) | Isolation (Vrms) | Best For | |-------|---------|-----------|-----------------|------------------|-----------| | | 50-600 | 80 | 5/4 | 5,000 | General purpose, wide CTR | | PC817 | 50-600 | 35 | 4/3 | 5,000 | SMPS feedback (lower V_CEO) | | 4N35 | 100 (min) | 30 | 10/10 | 5,000 | Hobbyist, older designs | | 6N137 | - (logic) | 7 | 0.075 | 5,000 | High-speed data (10 Mbps) | a1458 optocoupler datasheet
| Parameter | Symbol | Conditions | Value | Unit | |-----------|--------|-------------|-------|------| | Isolation Voltage | V_ISO | Ta=25°C, 60Hz, 1 sec | 5,000 | Vrms | | Isolation Resistance | R_IO | V_IO = 500V | 10^12 (min) | Ω | | Isolation Capacitance | C_IO | V_IO = 0V, f=1MHz | 0.8 (typ) | pF |
For digital logic interfaces (e.g., 5V to 3.3V), ranks A or B are sufficient. For analog applications or low I_F drive (e.g., 1 mA from a battery-powered MCU), ranks C or D provide higher sensitivity. Part 5: Switching Characteristics (Speed) The A1458 is not an ultra-high-speed device (like a logic gate optocoupler, e.g., 6N137), but it is adequate for most power supply feedback and low-speed data isolation (< 50 kHz). Inside the package, pin 1 connects to the
| Parameter | Symbol | Conditions | Typ | Max | Unit | |-----------|--------|-------------|-----|-----|------| | Rise Time | t_r | V_CE = 2V, I_C = 2mA, R_L = 100Ω | 4 | 18 | μs | | Fall Time | t_f | Same as above | 3 | 18 | μs | | Turn-On Time | t_on | I_F = 10 mA to I_C = 2mA | 5 | 20 | μs | | Turn-Off Time | t_off | Same | 4 | 20 | μs |
| Pin Number | Name | Description | |------------|-------------|------------------------------------| | 1 | Anode (A) | Positive terminal of the IR LED | | 2 | Cathode (C) | Negative terminal of the IR LED | | 3 | Emitter (E) | Output phototransistor emitter | | 4 | Collector (C)| Output phototransistor collector | Switching speed is heavily dependent on the load
The forward voltage drop of 1.2V-1.6V is typical for GaAs IR LEDs. When calculating current-limiting resistors for microcontroller outputs (e.g., 5V logic), use R = (V_OH - V_F) / I_F, where I_F is typically 5-20 mA. Output (Phototransistor) Characteristics | Parameter | Symbol | Conditions | Min | Typ | Max | Unit | |-----------|--------|-------------|-----|-----|-----|------| | Collector-Electron Breakdown | BV_CEO | I_C = 100 μA, I_F = 0 | 80 | - | - | V | | Emitter-Collector Breakdown | BV_ECO | I_E = 100 μA | 6 | - | - | V | | Dark Current (Leakage) | I_CEO | V_CE = 20V, I_F = 0, Ta=25°C | - | 10 | 100 | nA | | Dark Current at 100°C | I_CEO | V_CE = 20V, I_F = 0, Ta=100°C | - | 1 | 10 | μA |